Specifications of bipolar junction transistor (BJT)

There are some important specification of bipolar junction transistor (BJT) are as given below,

• The bipolar junction transistor (BJT) has small signal current gain, α (h_fb).
• Maximum collector current Ic _(max).
• Maximum collector to emitter voltage, V_{CE (max)}.
• Collector to emitter breakdown voltage, BV_CBO.
• Collector cut off current, I_CEO.
• Maximum collector dissipation, P_D.
• D.C. current gain β (h_FE).
• Collector saturation voltage, V_{CE (sat)}.
• Collector to emitter cut off voltage, V_CEO.
• Base emitter saturation voltage, V_{BE (sat)}.
• Collector base cut off current, I_CBO.

bipolar junction transistor (BJT)