Specifications of bipolar junction transistor (BJT)

There are some important specification of bipolar junction transistor (BJT) are as given below,

  • The bipolar junction transistor (BJT) has small signal current gain, α (hfb).
  • Maximum collector current Ic (max).
  • Maximum collector to emitter voltage, VCE (max).
  • Collector to emitter breakdown voltage, BVCBO.
  • Collector cut off current, ICEO.
  • Maximum collector dissipation, PD.
  • D.C. current gain β (hFE).
  • Collector saturation voltage, VCE (sat).
  • Collector to emitter cut off voltage, VCEO.
  • Base emitter saturation voltage, VBE (sat).
  • Collector base cut off current, ICBO.
bipolar junction transistor (BJT)

bipolar junction transistor (BJT)

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