Home / Electrical Articles / Specifications of bipolar junction transistor (BJT) Specifications of bipolar junction transistor (BJT) Author: Technical Editor Category: Electrical Articles 3 Apr 17 There are some important specification of bipolar junction transistor (BJT) are as given below, The bipolar junction transistor (BJT) has small signal current gain, α (hfb). Maximum collector current Ic (max). Maximum collector to emitter voltage, VCE (max). Collector to emitter breakdown voltage, BVCBO. Collector cut off current, ICEO. Maximum collector dissipation, PD. D.C. current gain β (hFE). Collector saturation voltage, VCE (sat). Collector to emitter cut off voltage, VCEO. Base emitter saturation voltage, VBE (sat). Collector base cut off current, ICBO. bipolar junction transistor (BJT) Like6 Dislike1 Related Articles:Specification of transistorWhat is BJT (Bipolar junction transistor)?Types of bipolar junction transistorVI characteristic insulated gate bipolar transistorCharacteristics of class-B amplifierAdvantages and disadvantages of bipolar junction transistor… Tags:transistor Related Posts The brief concept of EMF (Electromotive Force) by Ravi Barwad Earth leakage circuit breaker (ELCB) by Technical Editor Leave a Reply Cancel reply Your email address will not be published. Required fields are marked *Name:* Email:* Website : Save my name, email, and website in this browser for the next time I comment.