Home / Electrical Articles / Specifications of bipolar junction transistor (BJT) Specifications of bipolar junction transistor (BJT) Author: Technical Editor Category: Electrical Articles 3 Apr 17 There are some important specification of bipolar junction transistor (BJT) are as given below, The bipolar junction transistor (BJT) has small signal current gain, α (hfb). Maximum collector current Ic (max). Maximum collector to emitter voltage, VCE (max). Collector to emitter breakdown voltage, BVCBO. Collector cut off current, ICEO. Maximum collector dissipation, PD. D.C. current gain β (hFE). Collector saturation voltage, VCE (sat). Collector to emitter cut off voltage, VCEO. Base emitter saturation voltage, VBE (sat). Collector base cut off current, ICBO. bipolar junction transistor (BJT) Like11 Dislike4 Related Articles:Explain the frequency stability of an oscillatorFrequency stability of an oscillatorClassification of amplifiers accordingWhat is positive feedbackMagnetic hysteresisSuperposition’s theorem Tags:transistor Related Posts Why crude petroleum is to be fractionated? by Technical Editor Solar energy by Technical Editor Leave a Reply Cancel replyYour email address will not be published. Required fields are marked *Name:* Email:* Website : Save my name, email, and website in this browser for the next time I comment.